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| N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 MARCH 94 FEATURES * 400 Volt VDS * RDS(on)=50 ZVN0540A D G S ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at Tamb=25C Pulsed Drain Current Gate-Source Voltage Power Dissipation at Tamb=25C Operating and Storage Temperature Range SYMBOL VDS ID IDM VGS Ptot Tj:Tstg E-Line TO92 Compatible VALUE 400 90 600 20 UNIT V mA mA V mW C 700 -55 to +150 ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current(1) Static Drain-Source On-State Resistance (1) SYMBOL MIN. BVDSS VGS(th) IGSS IDSS ID(on) RDS(on) 100 70 10 4 7 7 16 10 3-356 150 50 400 1 3 20 10 400 MAX. UNIT CONDITIONS. V V nA A A ID=1mA, VGS=0V ID=1mA, VDS= VGS VGS= 20V, VDS=0V VDS=400 V, VGS=0 VDS=320 V, VGS=0V, T=125C(2) VDS=25 V, VGS=10V VGS=10V,ID=100mA VDS=25V,ID=100mA mA Forward Transconductance(1)(2gfs ) Input Capacitance (2) Common Source Output Capacitance (2) Ciss Coss mS pF pF pF ns ns ns ns VDS=25 V, VGS=0V, f=1MHz Reverse Transfer Capacitance Crss (2) Turn-On Delay Time (2)(3) Rise Time (2)(3) Turn-Off Delay Time (2)(3) Fall Time (2)(3) td(on) tr td(off) tf VDD 25V, ID=100mA ( 1 |
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